Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device...
Главные авторы: | Hiskett, P, Buller, G, Loudon, A, Smith, J, Gontijo, I, Walker, A, Townsend, P, Robertson, M |
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Формат: | Journal article |
Язык: | English |
Опубликовано: |
2000
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