ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES
Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By...
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
1989
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| Yhteenveto: | Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By contrast, hydrophilic oxides grown by low-temperature chemical treatments have a layered structure, SiO2 /SiO/Si. Low-temperature air-grown and chemical oxides on GaAs have a composition (GaAs)2O3, and are covered by a layer of adsorbed water. This same composition is also approached by thermal oxides grown between 300 and 400 °C in a low partial pressure of oxygen. |
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