ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES
Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By...
Main Authors: | Grovenor, C, Cerezo, A |
---|---|
Formato: | Journal article |
Idioma: | English |
Publicado em: |
1989
|
Registos relacionados
-
PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
Por: Demenet, J, et al.
Publicado em: (1989) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
Por: Wilshaw, P, et al.
Publicado em: (1989) -
VLSI fabrication principles : silicon and gallium arsenide /
Por: 359597 Ghandi, Sorab K.
Publicado em: (1994) -
VLSI fabrication principles: silicon and gallium arsenide/
Por: 359597 Ghandi, Sorab K.
Publicado em: (1983) -
Gallium arsenide /
Por: Blakemore, John Sydney
Publicado em: (1987)