ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES

ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES

Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By...

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Dades bibliogràfiques
Autors principals:	Grovenor, C, Cerezo, A
Format:	Journal article
Idioma:	English
Publicat:	1989

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