Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots
Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of...
| Váldodahkkit: | , , , , |
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| Materiálatiipa: | Journal article |
| Giella: | English |
| Almmustuhtton: |
2004
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