Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots
Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2004
|
| _version_ | 1826303581791191040 |
|---|---|
| author | Hadjipanayi, M Maciel, A Ryan, J Wasserman, D Lyon, SA |
| author_facet | Hadjipanayi, M Maciel, A Ryan, J Wasserman, D Lyon, SA |
| author_sort | Hadjipanayi, M |
| collection | OXFORD |
| description | Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of magnitude lower than in conventional (100) GaAs structures. It was observed that the InAs wetting layer (WL) was relatively rough which may indicate that the thin stress-matching AlAs pre-wetting layer that induced dot growth was not entirely effective. |
| first_indexed | 2024-03-07T06:04:53Z |
| format | Journal article |
| id | oxford-uuid:ed7e19fc-aa45-4476-8053-f66f29c23cae |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:04:53Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:ed7e19fc-aa45-4476-8053-f66f29c23cae2022-03-27T11:25:26ZScanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dotsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ed7e19fc-aa45-4476-8053-f66f29c23caeEnglishSymplectic Elements at Oxford2004Hadjipanayi, MMaciel, ARyan, JWasserman, DLyon, SAScanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of magnitude lower than in conventional (100) GaAs structures. It was observed that the InAs wetting layer (WL) was relatively rough which may indicate that the thin stress-matching AlAs pre-wetting layer that induced dot growth was not entirely effective. |
| spellingShingle | Hadjipanayi, M Maciel, A Ryan, J Wasserman, D Lyon, SA Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots |
| title | Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots |
| title_full | Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots |
| title_fullStr | Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots |
| title_full_unstemmed | Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots |
| title_short | Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots |
| title_sort | scanning near field photoluminescence mapping of 110 inas gaas self assembled quantum dots |
| work_keys_str_mv | AT hadjipanayim scanningnearfieldphotoluminescencemappingof110inasgaasselfassembledquantumdots AT maciela scanningnearfieldphotoluminescencemappingof110inasgaasselfassembledquantumdots AT ryanj scanningnearfieldphotoluminescencemappingof110inasgaasselfassembledquantumdots AT wassermand scanningnearfieldphotoluminescencemappingof110inasgaasselfassembledquantumdots AT lyonsa scanningnearfieldphotoluminescencemappingof110inasgaasselfassembledquantumdots |