Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots
Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2004
|