Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots

Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of...

詳細記述

書誌詳細
主要な著者: Hadjipanayi, M, Maciel, A, Ryan, J, Wasserman, D, Lyon, SA
フォーマット: Journal article
言語:English
出版事項: 2004