Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots

Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots

Scanning near-field optical spectroscopy measurements were carried out for photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots. Complex line spectra were observed to arise from ground state and excited state ecition complexes. The dot density was found to be about two orders of...

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Bibliographic Details
Main Authors:	Hadjipanayi, M, Maciel, A, Ryan, J, Wasserman, D, Lyon, SA
Format:	Journal article
Language:	English
Published:	2004

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