InP nanowires grown by SA-MOVPE
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE.
| Váldodahkkit: | , , , , , , |
|---|---|
| Materiálatiipa: | Conference item |
| Almmustuhtton: |
2012
|