InP nanowires grown by SA-MOVPE
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE.
| Những tác giả chính: | , , , , , , |
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| Định dạng: | Conference item |
| Được phát hành: |
2012
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| Tóm tắt: | A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE. |
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