InP nanowires grown by SA-MOVPE

InP nanowires grown by SA-MOVPE

A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE.

Manylion Llyfryddiaeth
Prif Awduron:	Gao, Q, Tan, H, Fu, L, Parkinson, P, Breuer, S, Wong-Leung, J, Jagadish, C
Fformat:	Conference item
Cyhoeddwyd:	2012

Eitemau Tebyg

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
gan: Soresi Stefano, et al.
Cyhoeddwyd: (2023-01-01)

Growth of InP nanowires on silicon using a thin buffer layer
gan: Fonseka, H, et al.
Cyhoeddwyd: (2012)

Quantum confinement of excitons in wurtzite InP nanowires
gan: Pemasiri, K, et al.
Cyhoeddwyd: (2015)

High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.
gan: Fonseka, H, et al.
Cyhoeddwyd: (2013)

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
gan: Peng, K, et al.
Cyhoeddwyd: (2016)

MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and
gan: Włodzimierz Strupiński, et al.
Cyhoeddwyd: (2002-03-01)

Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
gan: Peng, K, et al.
Cyhoeddwyd: (2017)

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.
gan: Yong, C, et al.
Cyhoeddwyd: (2013)

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.
gan: Joyce, H, et al.
Cyhoeddwyd: (2012)

GASB HETEROSTRUCTURES GROWN BY MOVPE
gan: Chidley, E, et al.
Cyhoeddwyd: (1988)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
gan: Wood, A, et al.
Cyhoeddwyd: (1997)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
gan: Jiang, N, et al.
Cyhoeddwyd: (2013)

Growth of InP nanowires on silicon using a thin buffer layer
gan: Fonseka, H. Aruni, et al.
Cyhoeddwyd: (2012)

Optical properties of single InP and GaAs nanowire heterostructures
gan: Jackson, H, et al.
Cyhoeddwyd: (2008)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1991)

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
gan: Joyce, H, et al.
Cyhoeddwyd: (2013)

Effects of growth rate on InP nanowires morphology and crystal structure
gan: Paiman, Suriati, et al.
Cyhoeddwyd: (2013)

Nonlinear optical processes in optically trapped InP nanowires
gan: Wang, Fan, et al.
Cyhoeddwyd: (2011)

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
gan: Mishra, A, et al.
Cyhoeddwyd: (2007)

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
gan: Paiman, S, et al.
Cyhoeddwyd: (2010)

Growth and characterization of GaAs1and#x2212;xSbx nanowires
gan: Yuan, X, et al.
Cyhoeddwyd: (2012)

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.
gan: Titova, L, et al.
Cyhoeddwyd: (2007)

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
gan: Paiman, S, et al.
Cyhoeddwyd: (2010)

Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
gan: Wang, Yuda, et al.
Cyhoeddwyd: (2014)

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires.
gan: Paiman, Suriati, et al.
Cyhoeddwyd: (2010)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation
gan: Popok V.N., et al.
Cyhoeddwyd: (2018-06-01)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
gan: Maxim A. Ladugin, et al.
Cyhoeddwyd: (2019-06-01)

Mn DOPING OF GaN LAYERS GROWN BY MOVPE
gan: Petr Šimek, et al.
Cyhoeddwyd: (2012-07-01)

An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
gan: Tang, Xiaohong, et al.
Cyhoeddwyd: (2013)

GROWTH OF GAINAS/INP MULTI-QUANTUM-WELL PIN PHOTODIODE STRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE
gan: Scott, M, et al.
Cyhoeddwyd: (1987)

Influence of growth temperature and V/III ratio on Au-assisted In xGa1-xAs nanowires
gan: Ameruddin, A, et al.
Cyhoeddwyd: (2012)

Three-dimensional in situ photocurrent mapping for nanowire photovoltaics.
gan: Parkinson, P, et al.
Cyhoeddwyd: (2013)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
gan: Roslan, Sharizar, et al.
Cyhoeddwyd: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
gan: Zulkafli Othaman, author, et al.
Cyhoeddwyd: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
gan: V. Orejuela, et al.
Cyhoeddwyd: (2024-09-01)

InP and InGaAs grown on InP substrate by molecular beam epitaxy
gan: Yu Hailong, et al.
Cyhoeddwyd: (2022-01-01)

Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
gan: H. Aruni Fonseka, et al.
Cyhoeddwyd: (2019-12-01)

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
gan: Joyce, H, et al.
Cyhoeddwyd: (2007)