The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis

Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates two ferromagnetic layers. Here we report...

詳細記述

書誌詳細
主要な著者: Petford-Long, A, Ma, Y, Cerezo, A, Larson, D, Singleton, E, Karr, B
フォーマット: Journal article
言語:English
出版事項: 2005

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