Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon

Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon

This article demonstrates an approach for multiscale characterisation of individual defects, such as grain boundaries, in multicrystalline silicon. The analysis techniques range from macroscale characterisation of average bulk lifetime, through photoluminescence to resolve spatial recombination, and...

Bibliografiset tiedot
Päätekijät:	Tweddle, D, Shaw, E, Douglas, J, Bonilla, R, Moody, M, Hamer, P, Wilshaw, P
Aineistotyyppi:	Conference item
Julkaistu:	AIP Publishing 2018

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