Dynamics of resonantly excited excitons in GaN

Dynamics of resonantly excited excitons in GaN

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We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observ...

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Dades bibliogràfiques
Autors principals: Hess, S, Walraet, F, Taylor, R, Ryan, J, Beaumont, B, Gibart, P
Format: Journal article
Idioma:English
Publicat: 1998
Descripció
Sumari:We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observe a much longer relaxation component of 375 ps, which is due to radiative recombination of free excitons. The results are in good agreement with theoretical predictions.

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