Dynamics of resonantly excited excitons in GaN
We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observ...
| Autors principals: | , , , , , |
|---|---|
| Format: | Journal article |
| Idioma: | English |
| Publicat: |
1998
|