Dynamics of resonantly excited excitons in GaN

We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observ...

Повний опис

Бібліографічні деталі
Автори: Hess, S, Walraet, F, Taylor, R, Ryan, J, Beaumont, B, Gibart, P
Формат: Journal article
Мова:English
Опубліковано: 1998