LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
Prif Awduron: | Mallard, R, Wilshaw, P, Mason, N, Walker, P, Booker, G |
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Fformat: | Journal article |
Cyhoeddwyd: |
1989
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Eitemau Tebyg
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LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
gan: Mallard, R, et al.
Cyhoeddwyd: (1989) -
GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
gan: Chidley, E, et al.
Cyhoeddwyd: (1989) -
GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
gan: Haywood, S, et al.
Cyhoeddwyd: (1989) -
PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
gan: Warburton, R, et al.
Cyhoeddwyd: (1991) -
PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
gan: Chidley, E, et al.
Cyhoeddwyd: (1991)