LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

समान संसाधन

• LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
  द्वारा: Mallard, R, और अन्य
  प्रकाशित: (1989)
• GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
  द्वारा: Chidley, E, और अन्य
  प्रकाशित: (1989)
• GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
  द्वारा: Haywood, S, और अन्य
  प्रकाशित: (1989)
• PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
  द्वारा: Warburton, R, और अन्य
  प्रकाशित: (1991)
• PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
  द्वारा: Chidley, E, और अन्य
  प्रकाशित: (1991)