Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM

Míreanna comhchosúla

• Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.
  de réir: Lozano, J, et al.
  Foilsithe / Cruthaithe: (2014)
• The dissociation of the [a plus c] dislocation in GaN
  de réir: Hirsch, P, et al.
  Foilsithe / Cruthaithe: (2013)
• A dissociation mechanism for the [a plus c] dislocation in GaN
  de réir: Nellist, P, et al.
  Foilsithe / Cruthaithe: (2014)
• Direct observation of the core structures of threading dislocations in GaN
  de réir: Xin, Y, et al.
  Foilsithe / Cruthaithe: (1998)
• Direct observations of atomic structures of defects in GaN by high resolution Z-contrast stem
  de réir: Xin, Y, et al.
  Foilsithe / Cruthaithe: (1998)