Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM
We demonstrate that it is possible to observe depth-dependent atomic displacements in a GaN crystal due to the sufficiently small depth of field achievable in the aberration-corrected scanning transmission electron microscope. The depth-dependent displacements associated with the Eshelby twist of sc...
| Main Authors: | , , , , , , , , |
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| Format: | Conference item |
| Published: |
Institute of Physics Publishing
2014
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