Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM

Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM

We demonstrate that it is possible to observe depth-dependent atomic displacements in a GaN crystal due to the sufficiently small depth of field achievable in the aberration-corrected scanning transmission electron microscope. The depth-dependent displacements associated with the Eshelby twist of sc...

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Dades bibliogràfiques
Autors principals:	Lozano, J, Guerrero-Lebrero, M, Yasuhara, A, Okinishi, E, Zhang, S, Humphreys, C, Galindo, P, Hirsch, P, Nellist, P
Format:	Conference item
Publicat:	Institute of Physics Publishing 2014

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