Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Two-dimensional exciton behavi...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
Show other versions (1)
Bibliographic Details
Main Authors:
Na, J
,
Taylor, R
,
Rice, J
,
Robinson, J
,
Lee, K
,
Park, Y
,
Park, C
,
Kang, T
Format:
Journal article
Published:
2005
Holdings
Description
Other Versions (1)
Similar Items
Staff View
Similar Items
Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
by: Na, J, et al.
Published: (2005)
Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns
by: Takao Oto, et al.
Published: (2016-11-01)
The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy
by: Park, Y, et al.
Published: (2006)
Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.
by: Park, Y, et al.
Published: (2008)
Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
by: Eugenii Evropeitsev, et al.
Published: (2023-07-01)