PHONON-ASSISTED TUNNELING OF PHOTOEXCITED CARRIERS FROM INGAAS QUANTUM WELLS IN APPLIED ELECTRIC-FIELDS
We have measured photocurrent spectra and photoluminescnce decay times of InGaAs quantum well pin structures as a function of temperature under different conditions of illumination intensity and applied electric field. Our results give clear evidence that phonon-assisted tunnelling of carriers is th...
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| Format: | Conference item |
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1989
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