MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence...

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Bibliografiske detaljer
Main Authors:	Mock, P, Booker, G, Mason, N, Nicholas, R, Aphandery, E, Topuria, T, Browning, N
Format:	Conference item
Udgivet:	2001

Lignende værker

Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
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Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
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MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
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Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study
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Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
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Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures
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Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
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Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots
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Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
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Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
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af: Haywood, S, et al.
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Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
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Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
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TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE
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ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
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EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
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Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb
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Self-Catalyzed InSb/InAs Quantum Dot Nanowires
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Magnetotransport properties of InSb-MnSb nanostructured films
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Magnetoresistance of vertical transport in InAs/GaSb superlattices
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The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
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Intersubband transitions in InAs GaSb semimetallic superlattices
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Optical probing of the minigap in InAs/GaSb superlattices
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Udgivet: (1999)

Magnetic breakdown in the semimetallic InAs/GaSb system
af: Symons, D, et al.
Udgivet: (1998)

Improved photoluminescence from electrochemically passivated GaSb
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Udgivet: (1997)

Magnetic breakdown in the semimetallic InAs/GaSb system
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Udgivet: (1998)

Far infrared modulated photoluminescence in InSb quantum dots
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CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH4)2Cr2O7−HBr−H2O ETCHING COMPOSITIONS
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Optical Properties of GaSb Nanofibers
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Study of the vibrational modes of GaSb/AlSb (001) superlattices
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Magnetoabsorption in InSb quantum-well heterostructures
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Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
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Intersubband transitions in InAs/GaSb semi-metallic superlattices
af: Poulter, A, et al.
Udgivet: (1998)

Interface composition dependence of the band offset in InAs/GaSb
af: Daly, MS, et al.
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