Growth of carbon nanotubes on GaAs
Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed gr...
| Hlavní autoři: | , , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
2007
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| Shrnutí: | Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs. © 2007 Elsevier B.V. All rights reserved. |
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