Growth of carbon nanotubes on GaAs
Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed gr...
Päätekijät: | Engel-Herbert, R, Takagaki, Y, Hesjedal, T |
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Aineistotyyppi: | Journal article |
Kieli: | English |
Julkaistu: |
2007
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