Growth of carbon nanotubes on GaAs

Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed gr...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Engel-Herbert, R, Takagaki, Y, Hesjedal, T
Aineistotyyppi: Journal article
Kieli:English
Julkaistu: 2007

Samankaltaisia teoksia