Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Bias-dependent STM investigati...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
Bibliographic Details
Main Authors:
Norenberg, H
,
Bowler, DR
,
Briggs, G
Format:
Conference item
Published:
1998
Holdings
Description
Similar Items
Staff View
Similar Items
ADSORPTION OF TRIMETHYLGALLIUM ON SEMICONDUCTOR SURFACES - STM OBSERVATIONS
by: Mayne, A, et al.
Published: (1993)
An elevated temperature STM study of the Si(001) c(4x4) surface reconstruction
by: Norenberg, H, et al.
Published: (1999)
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
by: Owen, J, et al.
Published: (1997)
IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING
by: Owen, J, et al.
Published: (1995)
Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
by: Goldfarb, I, et al.
Published: (1999)