Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
Main Authors: | Norenberg, H, Bowler, DR, Briggs, G |
---|---|
Format: | Conference item |
Izdano: |
1998
|
Podobne knjige/članki
-
ADSORPTION OF TRIMETHYLGALLIUM ON SEMICONDUCTOR SURFACES - STM OBSERVATIONS
od: Mayne, A, et al.
Izdano: (1993) -
An elevated temperature STM study of the Si(001) c(4x4) surface reconstruction
od: Norenberg, H, et al.
Izdano: (1999) -
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
od: Owen, J, et al.
Izdano: (1997) -
IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING
od: Owen, J, et al.
Izdano: (1995) -
Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
od: Goldfarb, I, et al.
Izdano: (1999)