High-performance devices from surface-conducting thin-film diamond
Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this paper commercially accessible polycrystalline thi...
| Main Authors: | , , , , |
|---|---|
| Formato: | Conference item |
| Publicado em: |
Elsevier
1999
|