High-performance devices from surface-conducting thin-film diamond

High-performance devices from surface-conducting thin-film diamond

Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this paper commercially accessible polycrystalline thi...

Bibliografiset tiedot
Päätekijät:	Jackman, R, Looi, H, Pang, L, Whitfield, MD, Foord, J
Aineistotyyppi:	Conference item
Julkaistu:	Elsevier 1999

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