High-performance devices from surface-conducting thin-film diamond
Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this paper commercially accessible polycrystalline thi...
| Үндсэн зохиолчид: | , , , , |
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| Формат: | Conference item |
| Хэвлэсэн: |
Elsevier
1999
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