Direct observation of hydrogen at defects in multicrystalline silicon

Direct observation of hydrogen at defects in multicrystalline silicon

Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...

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Dades bibliogràfiques
Autors principals:	Tweddle, D, Hamer, P, Shen, Z, Markevich, VP, Moody, MP, Wilshaw, PR
Format:	Journal article
Idioma:	English
Publicat:	Wiley 2019

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