Direct observation of hydrogen at defects in multicrystalline silicon

Direct observation of hydrogen at defects in multicrystalline silicon

Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...

書誌詳細
主要な著者:	Tweddle, D, Hamer, P, Shen, Z, Markevich, VP, Moody, MP, Wilshaw, PR
フォーマット:	Journal article
言語:	English
出版事項:	Wiley 2019

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