Direct observation of hydrogen at defects in multicrystalline silicon

Direct observation of hydrogen at defects in multicrystalline silicon

Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...

Полное описание

Библиографические подробности
Главные авторы:	Tweddle, D, Hamer, P, Shen, Z, Markevich, VP, Moody, MP, Wilshaw, PR
Формат:	Journal article
Язык:	English
Опубликовано:	Wiley 2019

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