Direct observation of hydrogen at defects in multicrystalline silicon
Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...
| 主要な著者: | , , , , , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
Wiley
2019
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