Nitrogen diffusion and interaction with dislocations in single-crystal silicon
The results of dislocation unlocking experiments are reported. The stress required to unpin a dislocation from nitrogen impurities in nitrogen-doped float-zone silicon (NFZ-Si) and from oxygen impurities in Czochralski silicon (Cz-Si) is measured, as a function of the unlocking duration. It is found...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2009
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