Improved efficiency of GaSb/GaAs TPV cells using an offset p-n junction and off-axis (100) substrates
The external quantum efficiency of p-GaSb/n-GaAs heterojunction TPV cells has been enhanced by using a thin n-GaSb buffer layer between the GaAs and the p-GaSb to offset the p-n junction from the heterojunction. Cells with the p-n junction displaced from the heterojunction showed a significant impro...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
2004
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