Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

Eitemau Tebyg

• Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
  gan: Shields, P, et al.
  Cyhoeddwyd: (2002)
• Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
  gan: T. Scheinert, et al.
  Cyhoeddwyd: (2019-12-01)
• Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
  gan: Jing Cai, et al.
  Cyhoeddwyd: (2024-03-01)
• Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes
  gan: Juanli Zhao, et al.
  Cyhoeddwyd: (2018-10-01)
• Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
  gan: Bera, L. K., et al.
  Cyhoeddwyd: (2014)