Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

Liknande verk

• Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
  av: Shields, P, et al.
  Publicerad: (2002)
• Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
  av: Jing Cai, et al.
  Publicerad: (2024-03-01)
• Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
  av: Bera, L. K., et al.
  Publicerad: (2014)
• Effect of oxygen on the crystallinity and defect state of AlxGa1−xN epilayers
  av: Chang Wan Ahn, et al.
  Publicerad: (2023-01-01)
• Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
  av: Aabdin, Zainul, et al.
  Publicerad: (2024)