Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

Παρόμοια τεκμήρια

• Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
  ανά: Shields, P, κ.ά.
  Έκδοση: (2002)
• Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
  ανά: T. Scheinert, κ.ά.
  Έκδοση: (2019-12-01)
• Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
  ανά: Jing Cai, κ.ά.
  Έκδοση: (2024-03-01)
• Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes
  ανά: Juanli Zhao, κ.ά.
  Έκδοση: (2018-10-01)
• Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
  ανά: Bera, L. K., κ.ά.
  Έκδοση: (2014)