Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies

Ижил төстэй зүйлс

• Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
  -н: Shields, P, зэрэг
  Хэвлэсэн: (2002)
• Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
  -н: T. Scheinert, зэрэг
  Хэвлэсэн: (2019-12-01)
• Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
  -н: Jing Cai, зэрэг
  Хэвлэсэн: (2024-03-01)
• Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes
  -н: Juanli Zhao, зэрэг
  Хэвлэсэн: (2018-10-01)
• Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
  -н: Bera, L. K., зэрэг
  Хэвлэсэн: (2014)