Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor&...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2005
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