Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor&...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
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2005
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| _version_ | 1797105913891389440 |
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| author | Lloyd-Hughes, J Castro-Camus, E Johnston, M |
| author_facet | Lloyd-Hughes, J Castro-Camus, E Johnston, M |
| author_sort | Lloyd-Hughes, J |
| collection | OXFORD |
| description | We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Γ, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power. © 2005 Elsevier Ltd. All rights reserved. |
| first_indexed | 2024-03-07T06:54:10Z |
| format | Journal article |
| id | oxford-uuid:fd8ebbed-cb90-474b-ae72-fb49b38558df |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:54:10Z |
| publishDate | 2005 |
| record_format | dspace |
| spelling | oxford-uuid:fd8ebbed-cb90-474b-ae72-fb49b38558df2022-03-27T13:29:38ZSimulation and optimisation of terahertz emission from InGaAs and InP photoconductive switchesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:fd8ebbed-cb90-474b-ae72-fb49b38558dfEnglishSymplectic Elements at Oxford2005Lloyd-Hughes, JCastro-Camus, EJohnston, MWe simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Γ, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power. © 2005 Elsevier Ltd. All rights reserved. |
| spellingShingle | Lloyd-Hughes, J Castro-Camus, E Johnston, M Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches |
| title | Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches |
| title_full | Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches |
| title_fullStr | Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches |
| title_full_unstemmed | Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches |
| title_short | Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches |
| title_sort | simulation and optimisation of terahertz emission from ingaas and inp photoconductive switches |
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