Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor&...

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Bibliographic Details
Main Authors:	Lloyd-Hughes, J, Castro-Camus, E, Johnston, M
Format:	Journal article
Language:	English
Published:	2005

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