High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant adv...

وصف كامل

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Joyce, H, Gao, Q, Tan, H, Jagadish, C, Kim, Y, Fickenscher, M, Perera, S, Hoang, T, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J
التنسيق: Journal article
اللغة:English
منشور في: 2008

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