Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures

Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures

InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic stru...

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Hlavní autoři: Nicholas, R, Lakrimi, M, Khym, S, Mason, N, Poulter, A, Vaughan, T, Walker, P, Maude, D, Portal, J, Symons, D, Peeters, F
Médium: Conference item
Vydáno: 1998

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