Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures
InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic stru...
Päätekijät: | Nicholas, R, Lakrimi, M, Khym, S, Mason, N, Poulter, A, Vaughan, T, Walker, P, Maude, D, Portal, J, Symons, D, Peeters, F |
---|---|
Aineistotyyppi: | Conference item |
Julkaistu: |
1998
|
Samankaltaisia teoksia
-
Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
Tekijä: Lakrimi, M, et al.
Julkaistu: (1997) -
Optical probing of the minigap in InAs/GaSb superlattices
Tekijä: Poulter, A, et al.
Julkaistu: (1998) -
Optical probing of the minigap in InAs/GaSb superlattices
Tekijä: Poulter, A, et al.
Julkaistu: (1999) -
Magnetic breakdown in the semimetallic InAs/GaSb system
Tekijä: Symons, D, et al.
Julkaistu: (1998) -
Magnetic breakdown in the semimetallic InAs/GaSb system
Tekijä: Symons, D, et al.
Julkaistu: (1998)