Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures
InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic stru...
| Auteurs principaux: | , , , , , , , , , , |
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| Format: | Conference item |
| Publié: |
1998
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