Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures
InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic stru...
Váldodahkkit: | Nicholas, R, Lakrimi, M, Khym, S, Mason, N, Poulter, A, Vaughan, T, Walker, P, Maude, D, Portal, J, Symons, D, Peeters, F |
---|---|
Materiálatiipa: | Conference item |
Almmustuhtton: |
1998
|
Geahča maid
-
Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
Dahkki: Lakrimi, M, et al.
Almmustuhtton: (1997) -
Optical probing of the minigap in InAs/GaSb superlattices
Dahkki: Poulter, A, et al.
Almmustuhtton: (1998) -
Optical probing of the minigap in InAs/GaSb superlattices
Dahkki: Poulter, A, et al.
Almmustuhtton: (1999) -
Magnetic breakdown in the semimetallic InAs/GaSb system
Dahkki: Symons, D, et al.
Almmustuhtton: (1998) -
Magnetic breakdown in the semimetallic InAs/GaSb system
Dahkki: Symons, D, et al.
Almmustuhtton: (1998)