Photoluminescence and raman scattering of GaAs1-xBix alloy
Photoluminescence (PL) and Raman spectra of GaAs1-xBix samples grown at different rates (0.09 to 0.5 µm/h) were investigated. The PL peak wavelength initially redshifted with the increase of growth rate and reached the longest wavelength (1158 nm) for sample grown at 0.23 µm/h. This is followed...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia
2020
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| Online Access: | http://journalarticle.ukm.my/15951/1/21.pdf |